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www.irf.com 1 07/10/09 IRF8721GPBF hexfet power mosfet notes through are on page 9 benefits very low gate charge low r ds(on) at 4.5v v gs low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating lead-free halogen-free applications control mosfet of sync-buck converters used for notebook processor power control mosfet for isolated dc-dc converters in networking systems top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 description the IRF8721GPBF incorporates the latest hexfet power mosfet silicon technology into the industry standard so-8 package the IRF8721GPBF has been optimized for parameters that are critical in synchronous buck operation including rds(on) and gate charge to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors for notebook and netcom applications. v dss r ds(on) max qg 30v 8.5m @v gs = 10v 8.3nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 v w c c/w max. 14 11 110 20 30 -55 to + 150 2.5 0.02 1.6

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c r ds(on) static drain-to-source on-resistance ??? 6.9 8.5 m ? ??? 10.6 12.5 v gs(th) gate threshold voltage 1.35 ??? 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.2 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 27 ??? ??? s q g total gate charge ??? 8.3 12 q gs1 pre-vth gate-to-source charge ??? 2.0 ??? q gs2 post-vth gate-to-source charge ??? 1.0 ??? nc q gd gate-to-drain charge ??? 3.2 ??? q godr gate charge overdrive ??? 2.0 ??? see fig. 16a and 16b q sw switch charge (q gs2 + q gd ) ??? 4.2 ??? q oss output charge ??? 5.0 ??? nc r g gate resistance ??? 1.8 3.0 ? t d(on) turn-on delay time ??? 8.2 ??? t r rise time ??? 11 ??? t d(off) turn-off delay time ??? 8.1 ??? ns t f fall time ??? 7.0 ??? c iss input capacitance ??? 1040 ??? c oss output capacitance ??? 229 ??? pf c rss reverse transfer capacitance ??? 114 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 112 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 15 23 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions see fig. 15a max. 68 11 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 14a mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 11a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v t j = 25c, i f = 11a, v dd = 15v di/dt = 300a/s t j = 25c, i s = 11a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 11a v gs = 4.5v typ. ??? v ds = v gs , i d = 25a r g = 1.8 ? v ds = 15v, i d = 11a v ds = 24v, v gs = 0v, t j = 125c ??? i d = 11a v gs = 0v v ds = 15v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 14a v gs = 10v 1.0 2.0 3.0 4.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60s pulse width t j = 25c t j = 150c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 5 10 15 20 25 q g , total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v i d = 11a

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 4 8 12 16 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) ? (sec) 1.935595 0.000148 7.021545 0.019345 26.61013 0.81305 14.43961 26.2 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / ri a 4 4 r 4 r 4

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15b. switching time waveforms fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as fig 15a. switching time test circuit 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 14a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.83a 1.05a bottom 11a v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 + -

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16a. gate charge test circuit fig 16b. gate charge waveform fig 17.
for n-channel hexfet power mosfets

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? !"# ?
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& vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

8 www.irf.com so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 9
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.09mh, r g = 25 ? , i as = 11a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2009

330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches)

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